SI2302DS,215
manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 20V 2.5A TO236AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
650mV @ 1mA (Min)
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
10 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
85mOhm @ 3.6A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
230 PF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
SOT-23 (TO-236AB)
Mfr:
NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
Power Dissipation (Max):
830mW (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2
Introduction
N-Channel 20 V 2.5A (Tc) 830mW (Tc) Surface Mount SOT-23 (TO-236AB)
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