PH1955L,115
manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 55V 40A LFPAK56
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
18 NC @ 5 V
Rds On (Max) @ Id, Vgs:
17.3mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
55 V
Vgs (Max):
±15V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1992 PF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Power Dissipation (Max):
75W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PH19
Introduction
N-Channel 55 V 40A (Tc) 75W (Tc) Surface Mount LFPAK56, Power-SO8
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