IRFD9210
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 200V 400MA 4DIP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-DIP (0.300", 7.62mm)
Gate Charge (Qg) (Max) @ Vgs:
8.9 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3Ohm @ 240mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
170 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
4-HVMDIP
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFD9210
Introduction
P-Channel 200 V 400mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
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