IRLD120
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 100V 1.3A 4DIP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
4-DIP (0.300", 7.62mm)
Gate Charge (Qg) (Max) @ Vgs:
12 NC @ 5 V
Rds On (Max) @ Id, Vgs:
270mOhm @ 780mA, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±10V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
490 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
4-HVMDIP
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
1.3A (Ta)
Power Dissipation (Max):
1.3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRLD120
Introduction
N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
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