IRFIZ48N
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
89 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1900 PF @ 25 V
Series:
HEXFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
PG-TO220-FP
Rds On (Max) @ Id, Vgs:
16mOhm @ 22A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
42W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 55 V 36A (Tc) 42W (Tc) Through Hole PG-TO220-FP
Send RFQ
Stock:
MOQ: