IRL3103D1S
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
43 NC @ 4.5 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1900 PF @ 25 V
Series:
FETKY™
Vgs (Max):
±16V
Vgs(th) (Max) @ Id:
1V @ 250µA
Supplier Device Package:
D2PAK
Rds On (Max) @ Id, Vgs:
14mOhm @ 34A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
3.1W (Ta), 89W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 30 V 64A (Tc) 3.1W (Ta), 89W (Tc) Surface Mount D2PAK
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