IXFT58N20Q
manufacturer:
IXYS
Description:
MOSFET N-CH 200V 58A TO268
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:
140 NC @ 10 V
Rds On (Max) @ Id, Vgs:
40mOhm @ 29A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
3600 PF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™
Supplier Device Package:
TO-268AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFT58
Introduction
N-Channel 200 V 58A (Tc) 300W (Tc) Surface Mount TO-268AA
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