FB180SA10
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
MOSFET N-CH 100V 180A SOT-227
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, MiniBLOC
Gate Charge (Qg) (Max) @ Vgs:
380 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 108A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
10700 PF @ 25 V
Mounting Type:
Chassis Mount
Series:
HEXFET®
Supplier Device Package:
SOT-227
Mfr:
Vishay General Semiconductor - Diodes Division
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Power Dissipation (Max):
480W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FB180
Introduction
N-Channel 100 V 180A (Tc) 480W (Tc) Chassis Mount SOT-227
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