IRFD420
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 500V 370MA 4DIP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-DIP (0.300", 7.62mm)
Gate Charge (Qg) (Max) @ Vgs:
24 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3Ohm @ 220mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
500 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
360 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
4-HVMDIP
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
370mA (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFD420
Introduction
N-Channel 500 V 370mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
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