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IRLI620G

manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 200V 4A TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Gate Charge (Qg) (Max) @ Vgs:
16 NC @ 10 V
Rds On (Max) @ Id, Vgs:
800mOhm @ 2.4A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Package:
Tube
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±10V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
360 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Power Dissipation (Max):
30W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRLI620
Introduction
N-Channel 200 V 4A (Tc) 30W (Tc) Through Hole TO-220-3
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