IRF7607
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
22 NC @ 5 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1310 PF @ 15 V
Series:
HEXFET®
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Supplier Device Package:
Micro8™
Rds On (Max) @ Id, Vgs:
30mOhm @ 6.5A, 4.5V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Power Dissipation (Max):
1.8W (Ta)
Package / Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
6.5A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 20 V 6.5A (Ta) 1.8W (Ta) Surface Mount Micro8™
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