IRLBA3803P
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
1V @ 250µA
Series:
HEXFET®
Gate Charge (Qg) (Max) @ Vgs:
140 NC @ 4.5 V
Supplier Device Package:
SUPER-220™ (TO-273AA)
Rds On (Max) @ Id, Vgs:
5mOhm @ 71A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
5000 PF @ 25 V
Drain To Source Voltage (Vdss):
30 V
Power Dissipation (Max):
270W (Tc)
Package / Case:
TO-273AA
Current - Continuous Drain (Id) @ 25°C:
179A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 30 V 179A (Tc) 270W (Tc) Through Hole SUPER-220™ (TO-273AA)
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