IRFBA1404P
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
200 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
7360 PF @ 25 V
Series:
HEXFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
SUPER-220™ (TO-273AA)
Rds On (Max) @ Id, Vgs:
3.7mOhm @ 95A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
300W (Tc)
Package / Case:
TO-273AA
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
206A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 40 V 206A (Tc) 300W (Tc) Through Hole SUPER-220™ (TO-273AA)
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