IRF3315L
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 150V 21A TO262
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
95 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1300 PF @ 25 V
Series:
HEXFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-262
Rds On (Max) @ Id, Vgs:
82mOhm @ 12A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
3.8W (Ta), 94W (Tc)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Drain To Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 150 V 21A (Tc) 3.8W (Ta), 94W (Tc) Through Hole TO-262
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