IRFSL23N20D
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 24A TO262
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
86 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1960 PF @ 25 V
Series:
HEXFET®
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Supplier Device Package:
TO-262
Rds On (Max) @ Id, Vgs:
100mOhm @ 14A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
3.8W (Ta), 170W (Tc)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 200 V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-262
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