IRL1004L
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 130A TO262
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
100 NC @ 4.5 V
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
5330 PF @ 25 V
Series:
HEXFET®
Vgs (Max):
±16V
Vgs(th) (Max) @ Id:
1V @ 250µA
Supplier Device Package:
TO-262
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 78A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
130A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 40 V 130A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262
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