IRF7526D1
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 30V 2A MICRO8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
11 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
180 PF @ 25 V
Series:
FETKY™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
1V @ 250µA
Supplier Device Package:
Micro8™
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.2A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.25W (Ta)
Package / Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
Schottky Diode (Isolated)
Introduction
P-Channel 30 V 2A (Ta) 1.25W (Ta) Surface Mount Micro8™
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