94-4764
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
140 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
6mOhm @ 71A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±16V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
5000 PF @ 25 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-262
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
140A (Tc)
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRL3803
Introduction
N-Channel 30 V 140A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262
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