IRF9410TR
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
27 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
550 PF @ 25 V
Series:
HEXFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
1V @ 250µA
Supplier Device Package:
8-SO
Rds On (Max) @ Id, Vgs:
30mOhm @ 7A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2.5W (Ta)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 30 V 7A (Ta) 2.5W (Ta) Surface Mount 8-SO
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