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IRFBE20S

manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 800V 1.8A D2PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
38 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.5Ohm @ 1.1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
530 PF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D²PAK (TO-263)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
1.8A (Tc)
Power Dissipation (Max):
-
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFBE20
Introduction
N-Channel 800 V 1.8A (Tc) Surface Mount D²PAK (TO-263)
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