IRF5806
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 20V 4A MICRO6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
11.4 NC @ 4.5 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
594 PF @ 15 V
Series:
HEXFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Supplier Device Package:
Micro6™(TSOP-6)
Rds On (Max) @ Id, Vgs:
86mOhm @ 4A, 4.5V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Power Dissipation (Max):
2W (Ta)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
P-Channel 20 V 4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
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