IRFI620
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 200V 4.1A TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Gate Charge (Qg) (Max) @ Vgs:
14 NC @ 10 V
Rds On (Max) @ Id, Vgs:
800mOhm @ 2.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
260 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
4.1A (Tc)
Power Dissipation (Max):
30W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFI620
Introduction
N-Channel 200 V 4.1A (Tc) 30W (Tc) Through Hole TO-220-3
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IRLL1503TR |
MOSFET N-CH 30V SOT223
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IRFZ44RSTRR |
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IRF7822TRL |
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IRF7822TRR |
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IRF644NS |
MOSFET N-CH 250V 14A D2PAK
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IRFB13N50A |
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IRFP460P |
MOSFET N-CH 500V 20A TO247-3
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IRFB17N50L |
MOSFET N-CH 500V 16A TO220AB
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IRLZ44L |
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IRLZ34L |
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