IRFS17N20DTRR
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
50 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
1100 PF @ 25 V
Series:
HEXFET®
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Supplier Device Package:
D2PAK
Rds On (Max) @ Id, Vgs:
170mOhm @ 9.8A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
3.8W (Ta), 140W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 200 V 16A (Tc) 3.8W (Ta), 140W (Tc) Surface Mount D2PAK
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