RFP4N100
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
120 NC @ 20 V
Supplier Device Package:
TO-220-3
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 2.5A, 10V
Mfr:
Onsemi
FET Type:
N-Channel
Drain To Source Voltage (Vdss):
1000 V
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
4.3A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFP4N
Introduction
N-Channel 1000 V 4.3A (Tc) Through Hole TO-220-3
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