BUZ80A
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Discontinued At Digi-Key
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:
1350 PF @ 25 V
Series:
SIPMOS®
Vgs (Max):
±20V
Package:
Tube
Supplier Device Package:
TO-220AB
Rds On (Max) @ Id, Vgs:
3Ohm @ 2A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
100W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
3.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Introduction
N-Channel 800 V 3.6A (Tc) 100W (Tc) Through Hole TO-220AB
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