BSS119E6327
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 170MA SOT23-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
2.5 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds:
78 PF @ 25 V
Series:
SIPMOS®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.3V @ 50µA
Supplier Device Package:
PG-SOT23
Rds On (Max) @ Id, Vgs:
6Ohm @ 170mA, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
360mW (Ta)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
170mA (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 100 V 170mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
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