IRFU9014N
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 60V 5.1A IPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
12 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
270 PF @ 25 V
Series:
HEXFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
IPAK (TO-251AA)
Rds On (Max) @ Id, Vgs:
500mOhm @ 3.1A, 10V
Mfr:
Infineon Technologies
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
5.1A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
P-Channel 60 V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Through Hole IPAK (TO-251AA)
Send RFQ
Stock:
MOQ: