IRF5803D2
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 40V 3.4A 8SO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
37 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1110 PF @ 25 V
Series:
FETKY™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3V @ 250µA
Supplier Device Package:
8-SO
Rds On (Max) @ Id, Vgs:
112mOhm @ 3.4A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2W (Ta)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
3.4A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
Schottky Diode (Isolated)
Introduction
P-Channel 40 V 3.4A (Ta) 2W (Ta) Surface Mount 8-SO
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