RFP2N10L
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Obsolete
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds:
200 PF @ 25 V
Series:
-
Vgs (Max):
±10V
Package:
Tube
Supplier Device Package:
TO-220-3
Rds On (Max) @ Id, Vgs:
1.05Ohm @ 2A, 5V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Power Dissipation (Max):
25W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFP2N
Introduction
N-Channel 100 V 2A (Tc) 25W (Tc) Through Hole TO-220-3
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