BUZ30A
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 21A TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Obsolete
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:
1900 PF @ 25 V
Series:
SIPMOS®
Vgs (Max):
±20V
Package:
Tube
Supplier Device Package:
PG-TO220-3-1
Rds On (Max) @ Id, Vgs:
130mOhm @ 13.5A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
125W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Introduction
N-Channel 200 V 21A (Tc) 125W (Tc) Through Hole PG-TO220-3-1
Send RFQ
Stock:
MOQ: