BSP295E6327
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 1.8A SOT223-4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
17 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds:
368 PF @ 25 V
Series:
SIPMOS®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
1.8V @ 400µA
Supplier Device Package:
PG-SOT223-4
Rds On (Max) @ Id, Vgs:
300mOhm @ 1.8A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.8W (Ta)
Package / Case:
TO-261-4, TO-261AA
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 60 V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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