IRF6607
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 27A DIRECTFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
75 NC @ 4.5 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds:
6930 PF @ 15 V
Series:
HEXFET®
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
2V @ 250µA
Supplier Device Package:
DIRECTFET™ MT
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 25A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 7V
Power Dissipation (Max):
3.6W (Ta), 42W (Tc)
Package / Case:
DirectFET™ Isometric MT
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
27A (Ta), 94A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 30 V 27A (Ta), 94A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT
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