SPU09P06PL
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 60V 9.7A TO251-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 10 V
Rds On (Max) @ Id, Vgs:
250mOhm @ 6.8A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
450 PF @ 25 V
Mounting Type:
Through Hole
Series:
SIPMOS®
Supplier Device Package:
P-TO251-3-1
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
9.7A (Tc)
Power Dissipation (Max):
42W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SPU09P
Introduction
P-Channel 60 V 9.7A (Tc) 42W (Tc) Through Hole P-TO251-3-1
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