SPP16N50C3HKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 560V 16A TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.9V @ 675µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
66 NC @ 10 V
Rds On (Max) @ Id, Vgs:
280mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
560 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1600 PF @ 25 V
Mounting Type:
Through Hole
Series:
CoolMOS™
Supplier Device Package:
PG-TO220-3-1
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Power Dissipation (Max):
160W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SPP16N
Introduction
N-Channel 560 V 16A (Tc) 160W (Tc) Through Hole PG-TO220-3-1
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