SPP04N60C3HKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 4.5A TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.9V @ 200µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
25 NC @ 10 V
Rds On (Max) @ Id, Vgs:
950mOhm @ 2.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
490 PF @ 25 V
Mounting Type:
Through Hole
Series:
CoolMOS™
Supplier Device Package:
PG-TO220-3-1
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Power Dissipation (Max):
50W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SPP04N
Introduction
N-Channel 650 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO220-3-1
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