IPB04N03LA
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 25V 80A TO263-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 60µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
32 NC @ 5 V
Rds On (Max) @ Id, Vgs:
3.9mOhm @ 55A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Drain To Source Voltage (Vdss):
25 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
3877 PF @ 15 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TO263-3-2
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Power Dissipation (Max):
107W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPB04N
Introduction
N-Channel 25 V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2
Send RFQ
Stock:
MOQ: