BAW101,215
manufacturer:
NXP USA Inc.
Description:
NEXPERIA BAW101 - HIGH VOLTAGE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays
Product Status:
Active
Current - Average Rectified (Io) (per Diode):
250mA (DC)
Operating Temperature - Junction:
150°C (Max)
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 100 MA
Package:
Bulk
Series:
-
Diode Configuration:
2 Independent
Supplier Device Package:
SOT-143B
Reverse Recovery Time (trr):
50 Ns
Mfr:
NXP USA Inc.
Technology:
Standard
Package / Case:
TO-253-4, TO-253AA
Voltage - DC Reverse (Vr) (Max):
300 V
Mounting Type:
Surface Mount
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
BAW101
Current - Reverse Leakage @ Vr:
150 NA @ 250 V
Introduction
Diode Array 2 Independent 300 V 250mA (DC) Surface Mount TO-253-4, TO-253AA
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