G4S06530BT
manufacturer:
Global Power Technology-GPT
Description:
SIC SCHOTTKY DIODE 650V 30A 3-PI
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays
Product Status:
Active
Current - Average Rectified (Io) (per Diode):
39A (DC)
Operating Temperature - Junction:
-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 15 A
Package:
Cut Tape (CT)
Tape & Box (TB)
Series:
-
Diode Configuration:
1 Pair Common Cathode
Supplier Device Package:
TO-247AB
Reverse Recovery Time (trr):
0 Ns
Mfr:
Global Power Technology-GPT
Technology:
SiC (Silicon Carbide) Schottky
Package / Case:
TO-247-3
Voltage - DC Reverse (Vr) (Max):
650 V
Mounting Type:
Through Hole
Speed:
No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr:
50 µA @ 650 V
Introduction
Diode Array 1 Pair Common Cathode 650 V 39A (DC) Through Hole TO-247-3
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| Image | Part # | Description | |
|---|---|---|---|
|
|
G3S12040B |
SIC SCHOTTKY DIODE 1200V 40A 3-P
|
|
|
|
G5S12040B |
SIC SCHOTTKY DIODE 1200V 40A 3-P
|
|
|
|
G5S12040PP |
SIC SCHOTTKY DIODE 1200V 40A 2-P
|
|
|
|
G3S12010B |
SIC SCHOTTKY DIODE 1200V 10A 3-P
|
|
|
|
G3S12006B |
SIC SCHOTTKY DIODE 1200V 6A 3-PI
|
|
|
|
G3S06516B |
SIC SCHOTTKY DIODE 650V 16A 3-PI
|
|
|
|
G5S12040BM |
SIC SCHOTTKY DIODE 1200V 40A 3-P
|
|
|
|
G3S12004B |
SIC SCHOTTKY DIODE 1200V 4A 3-PI
|
|
|
|
G4S06516BT |
SIC SCHOTTKY DIODE 650V 16A 3-PI
|
|
|
|
G3S06506B |
SIC SCHOTTKY DIODE 650V 6A 3-PIN
|
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