VS-HFA200FA120P
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
DIODE HEXFRED 100A 1200V SOT-227
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays
Product Status:
Obsolete
Current - Average Rectified (Io) (per Diode):
100A (DC)
Operating Temperature - Junction:
-55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If:
3.6 V @ 100 A
Package:
Tray
Series:
HEXFRED®
Diode Configuration:
2 Independent
Supplier Device Package:
SOT-227
Reverse Recovery Time (trr):
150 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Package / Case:
SOT-227-4, MiniBLOC
Voltage - DC Reverse (Vr) (Max):
1200 V
Mounting Type:
Chassis Mount
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
HFA200
Current - Reverse Leakage @ Vr:
75 µA @ 1200 V
Introduction
Diode Array 2 Independent 1200 V 100A (DC) Chassis Mount SOT-227-4, miniBLOC
Related Products
UGB10GCTHE3_A/P
10A,400V,35NS,DUAL UF RECT
UGB10FCTHE3_A/I
10A,300V,35NS,DUAL UF RECT
UGB10DCTHE3_A/I
10A,200V,20NS,DUAL UF RECT
UGB18ACTHE3_A/P
18A,50V,20NS,DUAL UF RECT
UGB10DCTHE3_A/P
10A,200V,20NS,DUAL UF RECT
UGB10CCTHE3_A/P
10A,150V,20NS,DUAL UF RECT
UGF10CCTHE3_A/P
10A,150V,20NS,DUAL UF RECT
UGB15HT-E3/81
DIODE ARRAY GENERAL PURPOSE
FESE16AT-E3/45
DIODE ARRAY GENERAL PURPOSE
FEPB6AT-E3/45
DIODE ARRAY GENERAL PURPOSE
| Image | Part # | Description | |
|---|---|---|---|
|
|
UGB10GCTHE3_A/P |
10A,400V,35NS,DUAL UF RECT
|
|
|
|
UGB10FCTHE3_A/I |
10A,300V,35NS,DUAL UF RECT
|
|
|
|
UGB10DCTHE3_A/I |
10A,200V,20NS,DUAL UF RECT
|
|
|
|
UGB18ACTHE3_A/P |
18A,50V,20NS,DUAL UF RECT
|
|
|
|
UGB10DCTHE3_A/P |
10A,200V,20NS,DUAL UF RECT
|
|
|
|
UGB10CCTHE3_A/P |
10A,150V,20NS,DUAL UF RECT
|
|
|
|
UGF10CCTHE3_A/P |
10A,150V,20NS,DUAL UF RECT
|
|
|
|
UGB15HT-E3/81 |
DIODE ARRAY GENERAL PURPOSE
|
|
|
|
FESE16AT-E3/45 |
DIODE ARRAY GENERAL PURPOSE
|
|
|
|
FEPB6AT-E3/45 |
DIODE ARRAY GENERAL PURPOSE
|
Send RFQ
Stock:
MOQ: