TRS20N65FB,S1F(S
manufacturer:
Toshiba Semiconductor and Storage
Description:
DODE SCHOTTKY 650V TO247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays
Product Status:
Active
Current - Average Rectified (Io) (per Diode):
10A (DC)
Operating Temperature - Junction:
175°C (Max)
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Package:
Tube
Series:
-
Diode Configuration:
1 Pair Common Cathode
Supplier Device Package:
TO-247
Reverse Recovery Time (trr):
0 Ns
Mfr:
Toshiba Semiconductor And Storage
Technology:
SiC (Silicon Carbide) Schottky
Package / Case:
TO-247-3
Voltage - DC Reverse (Vr) (Max):
650 V
Mounting Type:
Through Hole
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
TRS20N65
Current - Reverse Leakage @ Vr:
90 µA @ 650 V
Introduction
Diode Array 1 Pair Common Cathode 650 V 10A (DC) Through Hole TO-247-3
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