2SC3423
Specifications
Transistor Polarity ::
NPN
Product Category ::
Bipolar Transistor - Bipolar Junction Transistor (BJT)
Installation Style ::
Through Hole
Pd-power Dissipation ::
5 W
Factory Packaging Quantity ::
600
Collector - Base Voltage VCBO ::
150 V
Package ::
Tube
Collector Continuous Current ::
50 MA
Gain Bandwidth Product FT ::
200 MHz
Configuration ::
Single
Emitter - Base Voltage VEBO ::
5 V
Collector-emitter Maximum Voltage VCEO ::
150 V
DC Current Gain HFE Maximum ::
240
DC Collector / Base Gain Hfe Min ::
80
Manufacturer ::
Toshiba Semiconductor
Model Number:
2SC3423
Introduction
The 2SC3423,from Toshiba Semiconductor,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
2SK2837 |
Silicon N Channel MOS Type (π−MOSV)
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2SK2915 |
Silicon N Channel MOS Type (π−MOSV)
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|
2SK2382 |
MOSFET 220NIS2 PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-01)/OBSOLETE(10-04),
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2SA1316 |
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|
|
|
|
2SA1387 |
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|
|
|
|
2SK2545 |
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|
2SC1815GR |
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2SA950-O |
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2SK1865 |
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2SC3180N |
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