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G29
manufacturer:
Goford Semiconductor
Description:
P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
P-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Vgs(th) (Max) @ Id:
900mV @ 250µA
Series:
-
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
12.5 NC @ 10 V
Supplier Device Package:
SOT-23
Rds On (Max) @ Id, Vgs:
30mOhm @ 3A, 4.5V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1151 PF @ 10 V
Drain To Source Voltage (Vdss):
20 V
Power Dissipation (Max):
1W
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
6A
Technology:
MOSFET (Metal Oxide)
Model Number:
G29
Introduction
P-Channel 20 V 6A 1W Surface Mount SOT-23
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