G110N06T
manufacturer:
Goford Semiconductor
Description:
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
113 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
5538 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
TO-220
Rds On (Max) @ Id, Vgs:
6.4mOhm @ 20A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
120W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 60 V 110A (Tc) 120W (Tc) Through Hole TO-220
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GT035N10T |
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