GT025N06AT
manufacturer:
Goford Semiconductor
Description:
N60V, 170A,RD<2.5M@10V,VTH1.2V~2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
70 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
4954 PF @ 30 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
TO-220
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 20A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
215W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
170A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 60 V 170A (Tc) 215W (Tc) Through Hole TO-220
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GT035N10T |
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GT023N10M |
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