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G28N03D3
manufacturer:
Goford Semiconductor
Description:
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
15 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
891 PF @ 15 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
8-DFN (3.15x3.05)
Rds On (Max) @ Id, Vgs:
12mOhm @ 16A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
20.5W (Tc)
Package / Case:
8-PowerVDFN
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
G28N03D3
Introduction
N-Channel 30 V 28A (Tc) 20.5W (Tc) Surface Mount 8-DFN (3.15x3.05)
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