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G12P10K
manufacturer:
Goford Semiconductor
Description:
P100V,RD(MAX)<200M@-10V,RD(MAX)<
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
P-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
33 NC @ 10 V
Supplier Device Package:
TO-252 (DPAK)
Rds On (Max) @ Id, Vgs:
200mOhm @ 6A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1720 PF @ 50 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
57W
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C:
12A
Technology:
MOSFET (Metal Oxide)
Model Number:
G12P10K
Introduction
P-Channel 100 V 12A 57W Surface Mount TO-252 (DPAK)
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