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G250N03IE
manufacturer:
Goford Semiconductor
Description:
N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
9.1 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
573 PF @ 15 V
Series:
-
Vgs (Max):
±10V
Vgs(th) (Max) @ Id:
1.3V @ 250µA
Supplier Device Package:
SOT-23-3
Rds On (Max) @ Id, Vgs:
25mOhm @ 4A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Power Dissipation (Max):
1.4W (Tc)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
5.3A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
G250N03IE
Introduction
N-Channel 30 V 5.3A (Tc) 1.4W (Tc) Surface Mount SOT-23-3
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