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G02P06
manufacturer:
Goford Semiconductor
Description:
P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
P-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
11.3 NC @ 10 V
Supplier Device Package:
SOT-23
Rds On (Max) @ Id, Vgs:
190mOhm @ 1A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
573 PF @ 30 V
Drain To Source Voltage (Vdss):
60 V
Power Dissipation (Max):
1.5W
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
1.6A
Technology:
MOSFET (Metal Oxide)
Model Number:
G02P06
Introduction
P-Channel 60 V 1.6A 1.5W Surface Mount SOT-23
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GT035N10T |
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GT180P08T |
MOSFET P-CH 80V 89A TO-220
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GT023N10M |
N100V,140A,RD<2.7M@10V,VTH2.7V~4
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G110N06T |
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G65P06F |
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G080P06T |
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|
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