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G1K1P06HH
manufacturer:
Goford Semiconductor
Description:
P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
11 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
981 PF @ 30 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
SOT-223
Rds On (Max) @ Id, Vgs:
110mOhm @ 4A, 10V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
3.1W (Tc)
Package / Case:
TO-261-4, TO-261AA
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
G1K1P06HH
Introduction
P-Channel 60 V 4.5A (Tc) 3.1W (Tc) Surface Mount SOT-223
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