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G350P02LLE
manufacturer:
Goford Semiconductor
Description:
P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
17.2 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
1126 PF @ 10 V
Series:
-
Vgs (Max):
±10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Supplier Device Package:
SOT-23-6L
Rds On (Max) @ Id, Vgs:
35mOhm @ 4A, 4.5V
Mfr:
Goford Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Power Dissipation (Max):
1.4W (Tc)
Package / Case:
SOT-23-6
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
G350P02LLE
Introduction
P-Channel 20 V 4.5A (Tc) 1.4W (Tc) Surface Mount SOT-23-6L
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